Breakdown properties of irradiated MOS capacitors

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2609-2616

  Paccagnella, A ^a   Candelori, A ^a   Milani, A ^b   Formigoni, E ^b   Ghidini, G ^b   Pellizzer, F ^b   Drera, D ^c   Fuochi, P O ^c   Lavale, M ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON BEAMS; FAILURE (MECHANICAL); GAMMA RAYS; MOS DEVICES; NEUTRON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING SILICON;

ELECTRON IRRADIATION; GAMMA IRRADIATION; MOS CAPACITORS;

CAPACITORS;

EID: 0030370709     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556843     Document Type: Article

References (8)

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2. S. Kirn, H. Lee, C. Man, K. Lee, S. Choi, Y. Jeon, E. Di Fabrizio, and M. Gentili, "The effects of X-ray irradiation-induced damage on reliability in MOS structures," Solid-St. Electron. , vol. 38, pp. 95-99, 1995
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7. 2 reliability," IEEE Trans. Electron Devices, vol. 43, pp. 70-80, 1996, equation (15).
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