Derivation of growth mechanism of nano-defects in GaN from TEM data

Journal of Electron Microscopy

Volumn 49, Issue 2, 2000, Pages 339-348

  Liliental Weber, Zuzanna ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Dislocations; Dopants; GaN; Impurities; Nanotubes; Pinholes

Indexed keywords

CRYSTAL IMPURITIES; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; OPTICAL PROPERTIES; YARN;

DISLOCATION; EMPTY CORE; GROWTH MECHANISMS; HOMOEPITAXIAL LAYERS; LARGE DIAMETER; PINHOLE; QUANTUM-WELLS; TWO-DIMENSIONAL GROWTH;

NANOTUBES;

EID: 0034013839     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023814     Document Type: Article

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