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MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

Pinholes, dislocations and strain relaxation in InGaN

(7) Jahnen, B a Albrecht, M a Dorsch, W a Christiansen, S a Strunk, H P a Hanser, D b Davis, Robert F b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; LATTICE CONSTANTS; OPTOELECTRONIC DEVICES; STRAIN CONTROL; STRESS CONCENTRATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BUFFER LAYERS; ELECTRON TRANSPARENCY; POLYMER FOILS; STRAIN RELAXATION;

INDIUM COMPOUNDS;

EID: 4043076253 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/S1092578300001113 Document Type: Article

Times cited : (26)

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