Comparative analysis of strain and stress in MBE and MOCVD grown GaN thin films on sapphire

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 447-452

  Kruger, Joachim ^a   Sudhir, G S ^a   Corlatan, Dorina ^a   Cho, Yonah ^a   Kim, Yihwan ^a   Klockenbrink, Ralf ^a   Rouvimov, Sergei ^a   Liliental Weber, Zuzanna ^a   Kisielowski, Christian ^a   Rubin, Michael ^a   Weber, Eicke R ^a   McDermott, Brian ^a   Pittman, R ^a   Gertner, Edward R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITRIDES; PLASTICITY; POINT DEFECTS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; STRESS RELAXATION; SUBSTRATES; THIN FILMS;

SEMICONDUCTING GALLIUM NITRIDE THIN FILMS;

SEMICONDUCTING FILMS;

EID: 0031347973     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-447     Document Type: Conference Paper

References (20)