Effect of Si doping on the structure of GaN

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 487-493

  Liliental Weber, Zuzanna ^a   Ruvimov, S ^a   Suski, T ^a   Ager III, J W ^a   Swider, W ^a   Chen, Y ^a   Kisielowski, Ch ^a   Washburn, J ^a   Akasaki, I ^a   Amano, H ^a   Kuo, C ^a   Imler, W ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; GALLIUM NITRIDE; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030388476     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-487     Document Type: Conference Paper

References (7)