In situ etching with AsBr3 and regrowth in molecular beam epitaxy

Semiconductor Science and Technology

Volumn 15, Issue 2, 2000, Pages 169-177

  Schuler, H ^a   Kaneko, T ^a,b   Lipinski, M ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; ETCHING; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY;

ATOMIC LAYER PRECISE ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033904585     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/2/316     Document Type: Article

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