Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 962-967

  Micovic, M ^a   Nordquist, C D ^a   Lubyshev, D ^a   Mayer, T S ^a   Miller, D L ^a   Streater, R W ^b   SpringThorpe, A J ^b  

^a The Pennsylvania State University   (United States)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343766050     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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