Temperature dependence of GaAs chemical etching using ascl3

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 97-103

  Ortion, J M ^a   Cordier, Y ^a   Garcia, J Ch ^a   Grattepain, C ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; CRYSTAL IMPURITIES; DESORPTION; ETCHING; MATHEMATICAL MODELS; MORPHOLOGY; REACTION KINETICS; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; THERMAL EFFECTS;

CHEMICAL BEAM ETCHING; ETCHING RATE; PHENOMENOLOGICAL MODEL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030195010     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01019-X     Document Type: Article

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