In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 3814-3818

  Hayashi, Toshihiko ^a   Asahi, Hajime ^a   Yamamoto, Kazuhiko ^a   Hidaka, Ken Ichi ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Etched shape; GaAs; In situ etching; MOMBE; Selective etching; Trisdimethylaminoarsenic

Indexed keywords

ARSENIC; EXPERIMENTS; GALLIUM; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SCANNING ELECTRON MICROSCOPY;

ETCHED SHAPE; IN-SITU ETCHING; SELECTIVE ETCHING;

ETCHING;

EID: 0030196175     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3814     Document Type: Article

References (15)

1. C. R. Abernathy, P. W. Wisk, D. A. Bohling and G. T. Muhr: Appl. Phys. Lett. 60 (1992) 2421.
2. T. Koui, I. Suemune, K. Miyakoshi, K. Fujii and M. Yamanishi: Jpn. J. Appl. Phys. 31 (1992) L1272.
3. K. Hamaoka, I. Suemune, K. Fujii, T. Koui, A. Kishimoto and M. Yamanishi: Jpn. J. Appl. Phys. 30 (1991) L1579.
4. S. Salim, J. P. Lu, K. F. Jensen and D. A. Bohling: J. Cryst. Growth 124 (1992) 16.
5. H. Asahi, X. F. Liu, K. Inoue, D. Marx, K. Asami, K. Miki and S. Gonda: J. Cryst. Growth 145 (1994) 668.
6. A. B. Villaflor, H. Asahi, D. Marx, K. Miki, K. Yamamoto and S. Gonda: J. Cryst. Growth 150 (1995) 638.
7. X. F. Liu, H. Asahi, K. Inoue, D. Marx, K. Asami, K. Miki and S. Gonda: J. Appl. Phys. 77 (1995) 1952.
8. Y. Nomura, S. Goto and Y. Morishita: Jpn. J. Appl. Phys. 33 (1994) L1744.
9. D. Marx, H. Asahi, X. F. Liu, M. Higashiwaki, A. B. Villaflor, K. Miki, K. Yamamoto, S. Gonda, S. Shimomura and S. Hiyamizu: J. Cryst. Growth 150 (1995) 551.
10. W. T. Tsang, R. Kapre and P. F. Sciortino, Jr.: J. Cryst. Growth 136 (1994) 42.
11. T. H. Chiu, W. T. Tsang, M. D. Williams, C. A. C. Mendonça, K. Dreyer and F. G. Storz: J. Cryst. Growth 150 (1995) 546.
12. S. Goto, Y. Nomura and Y. Morishita: Jpn. J. Appl. Phys. 34 (1995) L533.
13. G. Yusa, H. Noge, Y. Kadoya, T. Someya, T. Suga, P. Petroff and H. Sakaki: Jpn. J. Appl. Phys. 34 (1995) L1198.
14. H. Asahi, T. Kaneko, Y. Okuno, Y. Itani, K. Asami and S. Gonda: J. Cryst. Growth 120 (1992) 252.
15. T. Kaneko, P. Smilauer and B. A. Joyce: Phys. Rev. Lett. 74 (1995) 3289.