Selective-area epitaxy and in-situ etching of GaAs using tris-dimethylaminoarsenic by chemical beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 15-20

  Li, N Y ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TEMPERATURE;

ETCHING EFFECT; REGROWN INTERFACE; SELECTIVE AREA EPITAXY; TRIETHYLGALLIUM; TRISDIMETHYLAMINOARSENIC;

CHEMICAL BEAM EPITAXY;

EID: 0030358143     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-15     Document Type: Conference Paper

References (16)