Atomic layer in situ etching and MBE regrowth

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 568-573

  Eberl, K ^a   Lipinski, M ^a   Schuler, H ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ETCHING; HALL EFFECT; HETEROJUNCTIONS; INTERFACES (MATERIALS); MASKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

ATOMIC LAYER PRECISE ETCHING; EPITAXIAL REGROWTH;

MOLECULAR BEAM EPITAXY;

EID: 0032657546     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01400-6     Document Type: Article

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