Fabrication of quantum wires in thermally etched V-grooves by molecular beam epitaxy

Semiconductor Science and Technology

Volumn 12, Issue 8, 1997, Pages 1046-1051

  Scheiner, D ^a,b   Hanein, Y ^a   Heiblum, M ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b Nova Measuring Instruments Ltd   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; ETCHING; MAGNETORESISTANCE; MASKS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

THERMAL ETCHING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031209303     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/8/019     Document Type: Article

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