Size modification of self-assembled InAs quantum dots by in situ etching

Semiconductor Science and Technology

Volumn 13, Issue 11, 1998, Pages 1341-1345

  Schuler, H ^a   Jin Phillipp, N Y ^a   Phillipp, F ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

SIZE MODIFICATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032202461     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/11/001     Document Type: Article

References (11)