Total in situ etching and regrowth in an MBE system: Application to buried heterostructure lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 845-853

  Gentner, Jean Louis ^{b,c,d,e,f,g,h}   Jarry, Philippe ^b,e,i   Goldstein, Løon ^a,b,i,j,k,l  

^a IEEE

^b NOKIA RESEARCH CENTER   (United States)

^c Ecl Natl Supørieure P   (France)

^d UNIVERSITÉ CLERMONT AUVERGNE   (France)

^e PHILIPS RESEARCH LABORATORIES   (Germany)

^f Philips Components   (France)

^g PHILIPS RESEARCH LABORATORIES   (Netherlands)

^h Alcatel Alsthom Rechercher ^*  (France)

ⁱ Universite Paris 1   (France)

^j CNRS   (France)

^k Ctr National d'Etudes des Recherche   (France)

^l Optoelectronic Components   (Canada)

more..

Author keywords

Chlorine materials; Epitaxial growth; Etching; Semiconductor device fabrication; Semiconductor lasers; Vacuum technology

Indexed keywords

CHLORINE COMPOUNDS; ETCHING; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; VACUUM TECHNOLOGY;

BURIED HETEROSTRUCTURE LASERS; BURIED RIDGE STRIPE (BRS) LASERS; CHEMICAL BEAM ETCHING TECHNIQUES (CBET);

SEMICONDUCTOR LASERS;

EID: 0031153297     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640638     Document Type: Article

References (21)

1. Y. L. Wang, H. Temkin, L. R. Harriot, R. A. Hamm, and J. S. Weiner, "Vacuum lithography for in-situ fabrication of buried semiconductor microstructures," Appl. Phys. Lett., vol. 57, no. 16, Oct. 15, 1990, pp. 1672-1674.
2. Y. Katayama, T. Ishikawa, N. Tanaka, M. Lopez, I. Matsuyama, Y. Ide, and M. Yamada, "Electron-beam induced etching as a key process in through-vacuum fabrication of GaAs-AlGaAs nanoheterostructures," in Extended Abstracts 1994 Int. Conf. Solid State Devices and Materials, Yokohama, Japan, 1994, pp. 93-95.
3. W. T. Tsang, R. M. Kapre, and P. F. Sciortino, Jr., "Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorous trichloride," Appl. Phys. Lett., vol. 62, no. 17, Apr. 26, 1993, pp. 2084-2086.
4. W. T. Tsang, "Selective-area epitaxy and etching by chemical beam epitaxy," Semiconduct. Sci. Technol., vol. 8, pp. 1016-1022, 1993.
5. J.-L. Gentner, Ph. Jarry, and L. Goldstein, "Chemical etching of InP in GSMBE," in Proc. Seventh Int. Conf. Indium Phosphide and Related Materials, Sapporo, Japan, May 9-13, 1995, pp. 636-639.
6. _, "Chemical etching of InP in GSMBE," J. Electron. Mater., vol. 25, no. 4, 1996, pp. 571-575.
7. W. T. Tsang, T. H. Chiu, and R. M. Kapre, "Monolayer chemical beam etching," J. Cryst. Growth, vol. 135, pp. 377-382, 1994.
8. W. T. Tsang, T. H. Chiu, and R. M. Kapre, "Monolayer chemical beam etching: Reverse molecular beam epitaxy," Appl. Phys. Lett., vol. 63, 1993, pp. 3500-3502.
9. 3," J. Cryst. Growth, vol. 164, 1996, pp. 97-103.
10. T. Kaneko, P. Smilauer, and B.A. Joyce, "Reentrant layer-by-layer etching of GaAs (001)," Phys. Rev. Lett., vol. 74, no. 16, Apr. 17, 1995, pp. 3289-3292.
11. T. Kaneko, T. Säger, and K. Eberl, "RHEED intensity observation of AlAs and GaAs by in situ etching using arsenic tribromide," in Mater. Res. Soc. Symp. Proc., vol. 405, 1996, pp. 67-71.
12. 3," J. Cryst. Growth, vol. 170, 1997, pp. 674-680.
13. R. M. Kapre, W. T. Tsang, and P. F. Sciortino, Jr., "In-situ dry etching of InP using phosphorus trichloride and re-growth inside a chemical beam epitaxial growth chamber," in Mater. Res. Soc. Symp. Proc., vol. 300, 1993, pp. 203-209.
14. J.-L. Gentner, Ph. Jarry, and L. Goldstein, "Single run etching and regrowth of InP/GaInAsP by GSMBE," in Proc. Eighth Int. Conf. Indium Phosphide and Related Materials, Schwäbisch Gmünd, Germany, Apr. 21-25, 1996, pp. 529-532.
15. T. H. Chiu, M. D. Williams, J. F. Ferguson, W. T. Tsang, and R. M. Kapre, "Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion," Appl. Phys. Lett., vol. 65, no. 4, July 25, 1994, pp. 448-450.
16. T. H. Chiu, M. D. Williams, W. T. Tsang, and R. M. Kapre, "Effects of cation difusion on the monolayer control of chemical beam etching," J. Vac. Sci. Technol., vol. B 12, no. 6, Nov/Dec 1994, pp. 3369-3373.
17. C. Caneau, R. Bhat, M. Koza, J. R. Hayes, and R. Esagui, "Etching of InP by HCl in an MOVPE reactor," J. Cryst. Growth, vol. 107, pp. 203-208, 1991.
18. C. A. C. Mendonça, T. H. Chiu, M. D. Williams, and F. G. Storz, "Impurity removal by chemical beam etching of GaAs," Electron. Lett., vol. 30, no. 20, pp. 1717-1719, Sept. 29, 1994.
19. T. H. Chiu, W. T. Tsang, M. D. Williams, C. A. C. Mendonça, K. Dreyer, and F. G. Storz, "Surface cleaning of GaAs by in-situ chemical beam etching," Appl. Phys. Lett., vol. 65, no. 26, pp. 3368-3370, Dec. 26, 1994.
20. R. Simes, R. M. Capella, B. Fernier, and H. P. Mayer, "Leading-edge laser production using two-inch technology," J. Opt. Quantum Electron., vol. 28, 1996, pp. 445-454.
21. J.-L. Gentner, Ph. Jarry, and L. Goldstein, unpublished results.