Chemical beam etching of InP in GSMBE

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 571-575

  Gentner, J L ^a   Jarry, Ph ^a   Goldstein, L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

Etching; InP; Molecular beam epitaxy (MBE); PCl3; Reflection high energy electron diffraction (RHEED)

Indexed keywords

EID: 4043053171     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666505     Document Type: Article

References (5)

1. W.T. Tsang, R.M. Kapre and P.F. Sciortino, Jr., Appl. Phys. Lett. 62, 2084 (1994).
2. T.H. Chiu, M.D. Williams, J.F. Ferguson, W.T. Tsang and R.M. Kapre, Appl. Phys. Lett. 65, 448 (1994).
3. T.H. Chiu, M.D. Williams, W.T. Tsang and R.M. Kapre, J. Vac. Sci. Technol. B 12, 3369 (1994).
4. Further experimental evidences confirming our simple model have been gathered and will be published.
5. Measured on a Nanoprobe PSI AFM instrument.