Effect of surface reconstructions on the surface morphology during in situ etching of GaAs

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 695-697

  Ritz, M ^a   Kaneko, T ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; ATOMIC FORCE MICROSCOPY; ETCHING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SURFACES;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031552794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119921     Document Type: Article

References (11)