Rheed intensity observation of AlAs and GaAs by in situ etching using arsenic tribromide

Materials Research Society Symposium - Proceedings

Volumn 405, Issue , 1996, Pages 67-71

  Kaneko, T ^a   Sager, T ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

ARSENIC TRIBROMIDE; ETCHING RATE; INTENSITY OSCILLATIONS; SELECTIVITY; SUPPLY RATE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0029766059     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)