SCOPUS 정보 검색 플랫폼

Volumn 188, Issue 1-4, 1998, Pages 363-369

Formation of InAs quantum dots by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and bisdimethylaminoarsenicchloride

(7) Sato, J a Asahi, H a Tashima, T a Hidaka, K a Yamamoto, K a Asami, K a Gonda, S a

a OSAKA UNIVERSITY (Japan)

Author keywords

BDMAAsCl; Enhanced decomposition; In situ etching; InAs; Mn; MOMBE; Quantum dot; TDMAAs; Wetting layer

Indexed keywords

ARSENIC COMPOUNDS; ETCHING; MANGANESE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; WETTING;

BISDIMETHYLAMINOARSENICCHLORIDE; INDIUM ARSENIDE; METALLORGANIC MOLECULAR BEAM EPITAXY; STRANSKI KRASTANOV GROWTH; TRISDIMETHYLAMINOARSENIC;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032099134 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00044-X Document Type: Article

Times cited : (13)

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