Modulated-beam studies of the layer-by-layer etching of GaAs(0 0 1) using AsBr3: Identification of the reaction mechanism

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1284-1288

  Zhang, J ^a   Naji, O P ^a   Steans, P ^a   Tejedor, P ^a   Kaneko, T ^b   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE COMPOUNDS; CRYSTAL ORIENTATION; DESORPTION; ETCHING; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; REACTION KINETICS; THERMAL EFFECTS;

MODULATED BEAM MASS SPECTROSCOPY (MBMS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031144257     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00831-7     Document Type: Article

References (12)

1. W.T. Tsang, T.H. Chiu and R.M. Kapre, Appl. Phys. Lett. 63 (1993) 3500.
2. T.H. Chiu, W.T. Tsang, M.D. Williams, C.A.C. Mendonca, K. Dareyer and F.G. Storz, Appl. Phys. Lett. 65 (1994) 3368.
3. W.T. Tsang, R.M. Kapre and P.F. Sciortino, Jr., J. Crystal Growth 136 (1994) 42.
4. T. Kaneko, P. Smilaure, B.A. Joyce, T. Kawamura and D.D. Vvedensky, Phys. Rev. Lett. 74 (1995) 3289.
5. J.H. Neave, B.A. Joyce, P.J. Dobson and N. Norton, Appl. Phys. A 31 (1983) 1.
6. T. Kaneko, T. Sager and K. Eberl, Mater. Res. Soc. Proc. 405 (1995), in press.
7. T. Kaneko and K., Eberl, Phys. Rev. Lett., submitted.
8. C.T. Foxon, M.R. Boudry and B.A. Joyce, Surf. Sci. 44 (1974) 69.
9. B.A. Joyce, Report Progt. Phys. 48 (1985) 1637.
10. T. Martin and C.R. Whitehouse, J. Crystal Growth 105 (1990) 57.
11. E.M. Gibson, C.T. Foxon, J. Zhang and B.A. Joyce, J. Crystal Growth 105 (1990) 81.
12. T. Kaneko, O. Naji, T.S. Jones and B.A. Joyce, J. Crystal Growth 136 (1994) 99.