Simplified method to calculate the band bending and the subband energies in mos capacitors

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1539-1543

  Hartmut Mueller, H ^a   Schulz, Max J ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITORS; CARRIER CONCENTRATION; COMPUTATIONAL METHODS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

QUANTUM MECHANICAL FINGERPRINT;

MOS DEVICES;

EID: 0031235528     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622612     Document Type: Article

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