Accurate characterization of electron and hole inversion-layer capacitance and its impact on low voltage operation of scaled MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 619-622

  Takagi, Shin ichi ^a   Takayanagi Takagi, Mariko ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); NANOTECHNOLOGY; OXIDES; SILICON WAFERS; ULTRATHIN FILMS;

GATE OXIDES; INVERSION LAYER CAPACITANCE;

MOSFET DEVICES;

EID: 0032277982     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)