Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 919-922

  Koh, M ^a   Iwamoto, K ^a   Mizubayashi, W ^a   Murakami, H ^a   Ono, T ^a   Tsuno, M ^a   Mihara, T ^a   Shibahara, K ^a   Yokoyama, S ^a   Miyazaki, S ^a   Miura, M M ^a   Hirose, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

DIRECT TUNNEL LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 0032256635     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)