Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 K

Electronics Letters

Volumn 18, Issue 7, 1982, Pages 309-311

  Takeda, Y ^a   Kamei, H ^a   Sasaki, A ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Electron mobility; Semiconductor devices and materials

Indexed keywords

SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

SEMICONDUCTOR MATERIALS;

EID: 0020113333     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19820211     Document Type: Article

References (6)

1. DINGLE, R., STÖRMER, H. L., GOSSARD, A. C., and WIEGMANN, W.: ‘Electron mobilities in modulation-doped semiconductor heterojunction superlattices’, Appl. Phys. Lett., 1978, 33, pp. 665-667
2. HIYAMIZU, S., MIMURA, T., FUJII, T., MANBU, K., and HASHIMOTO, H.: ‘Extremely high mobility of two-dimensional electron gas in selectively doped GaAs/N-AlGaAs heterojunction structure grown by MBE’, Jpn. J. Appl. Phys., 1981, 20, pp. L245-L248
3. MIMURA, T., HIYAMIZU, S., FUJII, T., and NANBU, K.: ‘A new field effect transistor with selectively doped GaAs/n-AlxGa1-xAs heterojunction’, Jpn. J. Appl. Phys., 1980, 19, pp. L225-L227
4. DELAGEBEAUDEUF, D., DELESCLUSE, P., LAVIRON, M., CHAPLART, J., and LINH, NUYEN, T.: ‘Two-dimensional electron gas MESFET structure’, Electron. Lett., 1980, 16, pp. 667-668
5. STERN, F., and HOWARD, W. E.: ‘Properties of semiconductor surface inversion layers in the electric quantum limit’, Phys. Rev., 1967, 163, pp. 816-835
6. STÖRMER, H. L., PINCZUK, A., GOSSARD, A. C., and WIEGMANN, W.: ‘Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices’, Appl. Phys. Lett., 1981, 38, pp. 691-693