Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers

Solid State Electronics

Volumn 34, Issue 6, 1991, Pages 545-552

  Shin, H ^a   Yeric, G M ^a   Tasch, A F ^a   Maziar, C M ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; ELECTRONS--SCATTERING; PHONONS;

ELECTRON EFFECTIVE MOBILITY; LOCAL-FIELD MOBILITY; MOS INVERSION LAYERS; PHYSICALLY-BASED SEMI-EMPIRICAL MODELS; SCREENED COULOMB SCATTERING; SURFACE ROUGHNESS SCATTERING;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026171426     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90123-G     Document Type: Article

References (32)

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5. A physically based mobility model for MOSFET numerical simulation
6. A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation
7. 1987 Symp. VLSI Technology Digest of Technical Papers
8. Drift and diffusion of charge carriers in silicon and their empirical relation to the electric field
9. Carrier mobilities in silicon empirically related to doping and field
10. Experimental derivation of the source and drain resistance of MOS transistors