Leakage Current, Reliability Characteristics, and Boron Penetration of Ultra-Thin (32-36A) O2-Oxides and N2O/NO Oxynitrides

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 331-334

  Lin, Chuan ^a   Chou, Anthony I ^a   Kumar, Kiran ^a   Chowdhury, Prasenjit ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; SUBSTRATES; BORON COMPOUNDS; CAPACITORS; CMOS INTEGRATED CIRCUITS; FILM GROWTH; LEAKAGE CURRENTS; MOS DEVICES; NITRIDES; OXIDES; RELIABILITY; SEMICONDUCTING SILICON;

BORON PENETRATION; LOW POWER APPLICATION; OXYNITRIDES; POLY GATES; RELIABILITY CHARACTERISTICS; SI SUBSTRATES; SUBSTRATE CONDITIONS; ULTRA-THIN; ULTRA-THIN GATE OXIDES;

LEAKAGE CURRENTS; ION IMPLANTATION;

BORON FLUORIDE; NITROUS OXIDE; OXYNITRIDES; ULTRA THIN GATE OXIDES;

EID: 0030399671     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553596     Document Type: Conference Paper

References (11)

1. J.R. Pfiester et al, IEEE Transactions on Electron Devices, Vol. 37, No. 8, p-1842, 1990.
2. K. Uwasawa, T. Mogami, T. Kunio, and M. Fukuma, IEDM Tech. Dig., 895 (1993).
3. K.S. Krisch et al, IEDM Tech. Dig., 325 (1994).
4. S. Ohkubo et al, 1995 Symposium on VLSI Technology Digest, p- 111.
5. H. Hwang, W. Ting, D.L. Kwong, and J.C. Lee, IEDM Tech. Dig., 421 (1990).
6. E. Hasegawa et al, Extended abstracts of the 1993 International conference on Solid state Devices and Materials, p-86, 1993.
7. R. Moazzami and C.Hu, IEDM Tech. Dig., 139 (1992).
8. E. Hasegawa et al, IEDM Tech. Dig., 327 (1995).
9. N.S. Saks, D.I. Ma, and W.B. Fowler, Appl. Phys. Lett. 67 (3), 17 July 1995.
10. Y. Okada et al, Appl. Phys. Lett. 63 (2), p-194, 1993.
11. H.S. Momose et al, IEDM Tech. Dig., 593 (1994).