Nitrided gate-oxide CMOS technology for improved hot-carrier reliability

Microelectronic Engineering

Volumn 22, Issue 1-4, 1993, Pages 245-252

  Hori, Takashi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GATES (TRANSISTOR); HOT CARRIERS; NITRIDING; OXIDES; SILICA; THERMAL EFFECTS;

FABRICATION CONDITION DEPENDENCIES; HOT CARRIER RELIABILITY; LIGHT NITRIDATION; NITRIDED OXIDE GATE DIELECTRICS; RAPID THERMAL PROCESSING (RTP);

CMOS INTEGRATED CIRCUITS;

EID: 0027642871     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(93)90167-4     Document Type: Article

References (21)

1. Electrical and physical characteristics of thin nitrided oxides prepared by rapid thermal nitridation
2. Improved transconductance under high normal field MOSFETs with ultrathin nitrided oxides
3. Characteristics of thermal SiO2 films during nitridation
4. IEDM Tech. Dig.