SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Applied Physics

Volumn 61, Issue 1, 1987, Pages 284-293

Characteristics of thermal SiO2 films during nitridation

(1) Pan, Paihung a

a IBM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549091992 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.338818 Document Type: Article

Times cited : (64)

References (40)

1
- 0019058614
- (1980) J. Electrochem. Soc , vol.127 , pp. 2053
- Ito, T.¹ Nozaki, T.² Ishikawa, H.³

2
- 84950533069
- (1975) Appl. Phys. Lett , vol.27 , pp. 550
- Raider, S.I.¹ Gdula, R.A.² Petrak, J.R.³

3
- 0020191405
- (1982) J. Appl. Phys , vol.53 , pp. 6996
- Habraken, F.H.P.M.¹ Kuiper, A.E.T.² Tamminga, Y.³ Theeten, J.B.⁴

4
- 0022012366
- (1985) Appl. Phys. Lett , vol.46 , pp. 361
- Vasquez, R.P.¹ Madhukar, A.² Grunthaner, F.J.³ Naiman, M.L.⁴

5
- 0019075473
- (1980) J. Electrochem. Soc , vol.127 , pp. 2248
- Ito, T.¹ Arakawa, H.² Nozaki, T.³ Ishikawa, H.⁴

6
- 84950557421
- in 1980 International Electron Devices Meeting, Tech. Dig. Washington, DC
- (1980) , pp. 562
- Naiman, M.L.¹ Terry, F.L.² Burns, J.A.³ Raffel, J.I.⁴ Aucoin, R.⁵

7
- 0020114560
- (1982) IEEE Trans. Electron Devices , vol.ED 29 , pp. 498
- Ito, T.¹ Nakamura, T.² Ishikawa, H.³

8
- 84950557420
- in 1982 International Electron Devices Meeting, Tech. Dig. Washington, DC
- (1982) , pp. 42
- Grinolds, H.R.¹ Wong, S.S.² Ekstedt, T.W.³ Sodini, C.G.⁴ Kwan, S.H.⁵ Jackson, K.H.⁶ Martinez, L.⁷

9
- 0020180222
- (1982) J. Electrochem. Soc , vol.129 , pp. 2042
- Lai, S.K.¹ Dong, D.W.² Hartstein, A.³

10
- 0020942379
- edited by V. J. Hapoor and H. J. Stein (Electrochemical Society, Pennington, NJ)
- (1983) Proceedings of the Symposium on Silicon Nitride Thin Insulating Films , pp. 346
- Wong, S.S.¹ Kwan, S.H.² Grinolds, H.R.³ Oldham, W.G.⁴

11
- 0020927657
- (1983) IEEE Trans. Nucl. Sci , vol.NS 30 , pp. 4141
- Pancholy, R.K.¹ Erdmann, F.M.²

12
- 0020909751
- in 1983 International Electron Devices Meeting, Tech. Dig. Washington, DC
- (1983) , pp. 190
- Lai, S.K.¹ Lee, J.² Dham, V.K.³

13
- 0020704668
- (1983) Solid State Technol , vol.26 , pp. 79
- Nemetz, J.A.¹ Tressler, R.E.²

14
- 0020824303
- (1983) Solid State Technol , vol.26 , pp. 209
- Nemetz, J.A.¹ Tressler, R.E.²

15
- 0021388469
- (1984) J. Electrochem. Soc , vol.131 , pp. 637
- Naiman, M.L.¹ Kirk, C.T.² Aucoin, R.J.³ Terry, F.L.⁴ Wyatt, P.W.⁵ Senturia, S.D.⁶

16
- 0021160953
- (1985) Appl. Phys. Lett , vol.44 , pp. 62
- Habraken, F.H.P.M.¹ Evers, E.J.² Kuiper, A.E.T.³

17
- 84950557426
- thesis, MIT
- (1984)
- Robins, S.T.¹

18
- 84914404785
- (IEEE Electron Devices Society and The Japan Society of Applied Physics, Maui, Hawaii)
- (1983) 1983 Symposium on VLSI Technology , pp. 88
- Wong, S.S.¹ Grinolds, H.R.² Oldham, W.G.³

19
- 0020936311
- edited by V. J. Papoor and H. J. Stein (Electrochemical Society, Pennington, NJ)
- (1983) Proceedings of the Symposium on Silicon Nitride Thin Insulating Films , pp. 324
- Moslehi, M.M.¹ Saraswat, K.C.²

20
- 0021526636
- (1984) J. Electron. Mater , vol.13 , pp. 913
- Kato, I.¹ Ito, T.² Nakamura, T.³ Ishikawa, H.⁴

21
- 0021640180
- in 1984 International Electron Devices Meeting, Tech. Dig. San Francisco, CA
- (1984) , pp. 165
- Moslehi, M.M.¹ Saraswat, K.C.²

22
- 0021640181
- in 1984 International Electron Devices Meeting, Tech. Dig. San Francisco, CA
- (1984) , pp. 169
- Nulman, J.¹ Krusius, J.P.² Rathbun, L.³

23
- 0022306869
- Kobe, Japan
- (1985) 1985 Symposium on VLSI Technology , pp. 14
- Moslehi, M.M.¹ Fu, C.Y.² Saraswat, K.C.³

24
- 0014805372
- (1970) Solid State Electron , vol.13 , pp. 873
- Kuhn, M.¹

25
- 0001557121
- (1976) Appl. Phys. Lett , vol.28 , pp. 566
- Lanford, W.A.¹ Trautvetter, H.P.² Ziegler, J.F.³ Keller, J.⁴

26
- 0017534649
- (1977) J. Vac. Sci. Technol , vol.14 , pp. 1064
- Pliskin, W.A.¹

27
- 0019899710
- (1982) J. Electrochem. Soc , vol.129 , pp. 184
- Ito, T.¹ Nakamura, T.² Ishikawa, H.³

28
- 0021409073
- (1985) J. Electrochem. Soc , vol.131 , pp. 875
- Chen, C.T.¹ Tseng, F.C.² Chang, C.Y.³ Lee, M.K.⁴

29
- 0442271993
- (1985) Appl. Phys. Lett , vol.47 , pp. 473
- Pan, P.¹ Paquette, C.²

30
- 0022012370
- (1985) J. Electrochem. Soc , vol.132 , pp. 398
- Fujita, S.¹ Sasaki, A.²

31
- 0004005306
- 2nd ed. (Wiley, New York), Chap7.
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

32
- 0004277486
- (Wiley, New York), Chap16.
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

33
- 84950549567
- (Pergamon, New York)
- (1978) The Physics of [formula omitted] and Its Interfaces
- Pantelides, S.T.¹

34
- 36849097956
- (1969) J. Appl. Phys , vol.40 , pp. 278
- Lenzinger, M.¹ Snow, E.H.²

35
- 0020163706
- (1982) J. Appl. Phys , vol.53 , pp. 5052
- Weinberg, Z.A.¹

36
- 84950557438
- (Metallurgical Society of AIMS, Santa Barbara, CA)
- (1984) 42nd Development Research Conference
- Terry, F.L.¹ Wyatt, P.W.² Naiman, M.L.³ Mathur, B.P.⁴ Kirk, C.T.⁵ Senturia, S.D.⁶

37
- 84950557436
- (Metallurgical Soc. of AIME, Santa Barbara, CA)
- (1984) 42nd Development Research Conference
- Chang, S.T.¹ Lyon, S.A.² Johnson, N.M.³

38
- 0017960299
- (1978) J. Appl. Phys , vol.49 , pp. 2478
- Harari, E.¹

39
- 0022129123
- (1985) J. Electron. Mater , vol.14 , pp. 617
- Pan, P.¹ Abernathey, J.² Schaefer, C.³

40
- 0022013081
- (1985) J. Appl. Phys , vol.57 , pp. 1214
- DiMaria, D.J.¹ Theis, T.N.² Kirtley, J.R.³ Pesavento, F.L.⁴ Dong, D.W.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.