Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

Applied Physics Letters

Volumn 63, Issue 2, 1993, Pages 194-196

  Okada, Yoshio ^a   Tobin, Philip J ^a   Lakhotia, Vikas ^a   Feil, William A ^a   Ajuria, Sergio A ^a   Hegde, Rama I ^a  

^a Free Scale Semiconductor   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0001615973     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.110400     Document Type: Article

References (9)