Furnace Grown Gate Oxynitride Using Nitric Oxide (NO)

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1608-1613

  Reid, Kimberly G ^a   Tobin, Philip J ^a   Hegde, Rama I ^a   Maiti, Bikas ^a   Ajuria, Sergio A ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); MOSFET DEVICES; PHYSICAL PROPERTIES; RELIABILITY; SEMICONDUCTOR GROWTH;

GATE OXYNITRIDE; NITRIC OXIDE; OXYNITRIDATION; THERMAL BUDGET; TUNNEL DIELECTRIC;

NITROGEN OXIDES;

EID: 0028515770     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310113     Document Type: Article

References (15)

1. H. Fukuda, T. Arakawa, and S. Ohno, “Electrical properties of thin oxynitrided SiO2 films formed by rapid thermal processing in an N2O ambient,” Electronics Lett., vol. 26, 1505, 1990.
2. H. Hwang, W. Ting, B. Maiti, D. L. Kwong, and J. Lee, “Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O,” Appl. Phys. Lett., vol. 57, p. 1010, 1990.
3. Z. Liu, H. J. Wann, P. K. Ko, C. Hu, and Y. C. Cheng, “Improvement of charge trapping characteristics of N2O-annealed and reoxidized N2O-annealed thin oxide,” IEEE Electron Device Lett., vol. 13, p. 519, 1992.
4. H. Soleimani, A. Philipossian, and B. Doyle, “A study of the growth kinetics of SiO2 in N2O,” IEDM Tech. Dig., p. 629, 1992.
5. Y. Okada, P. J. Tobin, R. I. Hegde, J. Liao, and P. Rushbrook, “Oxynitride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygen,” Appl. Phys. Lett., vol. 61, p. 3163, 1992.
6. G. W. Yoon, A. B. Joshi, J. Kim, G. Q. Lo, and D. L. Kwong, “Effects of growth temperature on TDDB characteristics of N2O-grown oxides,” IEEE Electron Device Lett., vol. 13, p. 606, 1992.
7. Y. Okada, P. J. Tobin, V. Lakhotia, W. A. Feil, S. A. Ajuria, and R. I. Hegde, “The relationship between growth condition, nitrogen profile and charge to breakdown of gate oxynitrides grown from pure N2O,” Appl. Phys. Lett., vol. 63. p. 194, 1993.
8. P. J. Tobin, Y. Okada, V. Lahkotia, S. A. Ajuria, W. A. Feil, and R. 1. Hegde, “Silicon oxynitride formation in nitrous oxide (N2O): the role of nitric oxide (NO),” in Dig. Technical Papers 1993 Symp. of VLSI Technol., p. 51.
9. P. J. Tobin, Y. Okada, V. Lahkotia, S. A. Ajuria, W. A. Feil, and R. I. Hegde, “Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): the role of nitric oxide (NO),” J. Appl. Phys., vol. 75, p. 1811, 1994.
10. Y. Okada, P. J. Tobin, V. Lahkotia, S. A. Ajuria, R. I. Hegde, J. C. Liao, P. P. Rushbrook, and L. J. Arias, Jr., “Evaluation of interfacial nitrogen concentration of RTP oxynitrides by reoxidation,” J Electrochem. Soc., vol. 140, p. L87, 1993.
11. J. Hayden, M. Woo, R. Taft, R. Subrahmanyan, B. Nguyen, C. Mazure, J. Lin, J. Ko, H. Kirsch, C. King, P. Kenkare, K. Kemp, and C. Gunderson, “A high-performance quadruple poly BiCMOS process for fast 16 mB SRAMS,” in IEDM Tech. Dig., p. 405, 1992.
12. To be published.
13. Y. Okada, P. J. Tobin, P. Rushbrook, and B. DeHart, “The performance and reliability of 0.4 micron MOSFET’s with gate oxynitrides grown by rapid thermal processing using mixtures of N2O and O2,” Trans. Electron Devices, vol. 41, p. 191, Feb. 1994.
14. T. Hori and H. Iwasaki, “Improved transconductance under high normal field in MOSFET’s with ultrathin nitrided oxide,” IEEE Electron Device Lett., vol. 10, p. 195, Oct. 1989.
15. Z. H. Liu, J. T. Krick, H. J. Wann, P. K. Ko, C. Hu, and Y. C. Cheng, “The effect of furnace N2O annealing on MOSFET’s,” IEDM Tech. Dig., p. 625, 1992.