MOS Characteristics of Ultrathin NO-Grown Oxynitrides

IEEE Electron Device Letters

Volumn 15, Issue 10, 1994, Pages 421-423

  Bhat, M ^a   Kim, J ^a   Yan, J ^a   Yoon, G W ^a   Han, L K ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; INTERFACES (MATERIALS); NITRIDING; NITROGEN OXIDES; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICA;

CHARGE TRAPPING PROPERTIES; IN SITU RAPID THERMAL PROCESSING; INTERFACE ENDURANCE; ULTRATHIN OXYNITRIDES;

MOS DEVICES;

EID: 0028531451     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.320988     Document Type: Article

References (11)

1. T. Hori, H. Iwasaki, and K. Tsuji, “Electrical and physical characteristics of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing,” IEEE Trans. Electron Devices, vol. 36, p. 340, 1989.
2. H. Fukuda, M. Yasuda, T. Iwabuchi, and S. Ohno, “Novel N2O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide film,” IEEE Electron Dev. Letts., vol. 12, p. 587, 1991.
3. W. Ting, G. Q. Lo, J. Ahn, T. Chu, and D. L. Kwong. “Comparison of dielectric wear-out between oxides grown in O 2 and N 2 O,” in Proc. IEEE Reliability Phys. Symp., 1991, p. 323.
4. P.J. Tobin, Y. Okada, V. Lakhotia, S. A. Ajuria, W. A. Feil, and R. Hegde, “Silicon oxynitride formation in nitrous oxide (N20): the role of nitric oxide (NO),” in Tech. Dig. Symp. VLSI Tech., p. 51, 1993.
5. E. G. Keim and A. Van Silfhout, “An investigation of the interaction of N 2 O with the Si(111)-7×7 surface suing AES and optical reftectometry: A comparison with 02,” Surface Science, vol. 216, p. L337, 1989.
6. M. Nishijima. H. Kobayashi, K. Edamoto, and M. Onchi, “Reactions of NO with Si(111) (7 x 7) surface: EELS, LEED and AES Studies,” Surface Science, vol. 137, p. 473, 1984.
7. W. Baker and A. L. Mossman, “Nitric oxide, “ Matheson gas data book, Sixth Edition, p. 514.- Lyndhurst, New Jersey, 1980.
8. C. T. Sah, “Models and experiments of degradation of oxidized silicon,” Solid-State Electronics, vol. 33, p. 147, 1990.
9. F. J. Grunthaner, P. J. Grunthaner, and J. Maserjian, “Radiation induced defects in SiO 2 as determined by XPS,” IEEE Trans. Nucl. Sci., vol. 29, p. 1462, 1982.
10. P. J. Apte and K. C. Saraswat, SiO 2 degradation with charge injection polarity,” IEEE Electron Dev. Letts., vol. 14 p. 512, 1993.
11. D. J. Dimaria, E. Cartier, and D. Arnold, “Impact ionization, trap cre-ation, degradation, and breakdown in silicon dioxide films on silicon,” J. Appl. Phys., vol. 73, p. 3367. 1993.