The Electrical Properties of Sub-5-nm Oxynitride Dielectrics Prepared in a Nitric Oxide Ambient Using Rapid Thermal Processing

IEEE Electron Device Letters

Volumn 15, Issue 12, 1994, Pages 516-518

  Yao, Z Q ^a   Harrison, H B ^a   Dimitrijev, S ^a   Yeow, Y T ^b  

^a GRIFFITH UNIVERSITY   (Australia)

^b UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELLIPSOMETRY; FILM GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITROGEN OXIDES; REFRACTIVE INDEX; SILICON WAFERS;

ELECTRON INJECTION; FILM THICKNESS; INTERFACE STATE GENERATION; NITRIC OXIDE AMBIENT; OXYNITRIDE DIELECTRICS; RAPID THERMAL PROCESSING; SEMICONDUCTOR PARAMETER ANALYZER;

DIELECTRIC FILMS;

EID: 0028730949     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.338422     Document Type: Article

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