Dielectric properties of (Ba, Sr)TiO3 thin films and their correlation with oxygen vacancy density

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 SUPPL. B, 1997, Pages

  Fukuda, Yukio ^a   Haneda, Hajime ^b   Sakaguchi, Isao ^b   Numata, Ken ^c   Aoki, Katsuhiro ^a   Nishimura, Akitoshi ^c  

^a Texas Instruments Japan Ltd   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

(Ba, Sr)TiO3; Dielectric properties; Dielectric relaxation; Isotopic exchange reaction; Oxygen vacancy; Sputtering deposition; Thin films

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CURRENT DENSITY; DIELECTRIC PROPERTIES OF SOLIDS; DIELECTRIC RELAXATION; FREQUENCY DOMAIN ANALYSIS; MAGNETRON SPUTTERING; SPUTTER DEPOSITION; THIN FILMS; TIME DOMAIN ANALYSIS;

ISOTOPIC EXCHANGE REACTIONS; OXYGEN VACANCY DENSITY; POWER LAW DEPENDENCE;

DIELECTRIC FILMS;

EID: 0031271207     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1514     Document Type: Article

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