Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0·7Sr0·3TiO3 thin film capacitors

Journal of the European Ceramic Society

Volumn 19, Issue 6-7, 1999, Pages 1457-1461

  Baniecki, J D ^a   Laibowitz, R B ^b   Shaw, T M ^b   Saenger, K L ^b   Duncombe, P R ^b   Cabral, C ^b   Kotecki, D E ^c   Shen, H ^d   Lian, J ^d   Ma, Q Y ^a  

^a Columbia University ^*  (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

^d Siemens Microelectronics Inc   (United States)

Author keywords

Capacitors.; Dielectric; Electrical properties; Interfaces

Indexed keywords

ANNEALING; CERAMIC CAPACITORS; DIELECTRIC RELAXATION; ELECTRON EMISSION; GASES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PHASE INTERFACES; SCHOTTKY BARRIER DIODES; THIN FILMS; TITANIUM OXIDES;

BARIUM STRONTIUM TITANATE; CHARGE LOSS; DIELECTRIC RELAXATION CURRENT;

DIELECTRIC MATERIALS;

EID: 0032645020     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0955-2219(98)00449-x     Document Type: Article

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