Influence of the relaxation current in baxsr(1-x)tio3 thin film capacitors on dram operation

IEICE Transactions on Electronics

Volumn E80-C, Issue 7, 1997, Pages 1043-1052

  Numatat, Ken ^a   Fukuda, Yukio ^a   Aoki, Katsuhiro ^a   Okuno, Yasutoshi ^a   Nishimura, Akitoshi ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

BST; Cell capacitor dielectric; Divergence; Power law; Relaxation current

Indexed keywords

CAPACITORS; EQUIVALENT CIRCUITS; INTEGRAL EQUATIONS; ITERATIVE METHODS; LEAKAGE CURRENTS; MATHEMATICAL TRANSFORMATIONS; THIN FILMS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); RELAXATION CURRENT;

RANDOM ACCESS STORAGE;

EID: 0031185844     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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