SCOPUS 정보 검색 플랫폼

Solid State Electronics

Volumn 38, Issue 12, 1995, Pages 2095-2100

Avalanche multiplication properties of GaAs calculated from spatially transient ionisation coefficients

(3) Wilson, S P a Brand, S a Abram, R A a

a DURHAM UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRONS; IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; STATISTICAL METHODS;

AVALANCHE MULTIPLICATION PROPERTIES; LUCKY DRIFT MODEL; MEAN FREE PATHS; PHOTONIC PULSE; SPATIALLY TRANSIENT IONIZATION COEFFICIENTS;

INFRARED DETECTORS;

EID: 0029542534 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00081-4 Document Type: Article

Times cited : (3)

References (23)

1
- 0004005306
- 2nd edn., Wiley, New York
- (1981) Physics of Semiconductor Devices
- Sze¹

2
- 0003953906
- 2nd edn., Prentice-Hall, New Jersey
- (1993) Optical communication systems
- Gowar¹

3
- 84922644221
- Multiplication noise in uniform avalanche diodes
- (1966) IEEE Transactions on Electron Devices , vol.13 ED , pp. 164
- McIntyre¹

4
- 0015360553
- The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental
- (1972) IEEE Transactions on Electron Devices , vol.19 ED , pp. 713
- Conradi¹

5
- 0005533732
- (1990) J. appl. Phys. , vol.67 , pp. 1929
- Marsland¹

6
- 0026866665
- (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1129
- Marsland¹ Woods² Brownhill³

7
- 0019317240
- Impact ionisation in multilayered heterojunction structures
- (1985) Electronics Letters , vol.16 , pp. 467
- Chin¹ Holonyak² Stillman³ Tang⁴ Hess⁵

8
- 0002528786
- (1982) Appl. Phys. Lett. , vol.40 , pp. 38
- Capasso¹ Tsang² Hutchinson³ Williams⁴

9
- 0020116014
- (1982) Electronics Lett. , vol.18 , pp. 375
- Blauvelt¹ Margalit² Yariv³

10
- 0004751910
- Theory of the doped quantum well superlattice APD: A new solid-state photomultiplier
- (1986) IEEE Journal of Quantum Electronics , vol.22 QE , pp. 1999
- Brennan¹

11
- 0024736412
- (1989) IEEE Trans. Electron Devices , vol.36 ED , pp. 1597
- Brennan¹

12
- 0004873492
- (1992) Appl. Phys. Lett. , vol.60 , pp. 85
- Aristin¹ Tarabi² Garrison³ Harris⁴ Summers⁵

13
- 0342395340
- (1987) Appl. Phys. Lett. , vol.50 , pp. 1897
- Brennan¹ Hess² Capasso³

14
- 0023250311
- (1987) Solid-St. Electron. , vol.30 , pp. 125
- Marsland¹

15
- 0028374953
- (1994) Solid-St. Electron. , vol.37 , pp. 243
- Wilson¹

16
- 6144236940
- (1994) Phys. Rev. B , vol.49 , pp. 7974
- Bringuier¹

17
- 0028444727
- (1994) Semiconductor Sci. Technol. , vol.9 , pp. 1171
- Wilson¹ Brand²

18
- 0015673363
- (1973) Solid-St. Electron. , vol.16 , pp. 1189
- Grant¹

19
- 0027559864
- Dead-space effects under near-breakdown conditions in AlGaAs/GaAs HBT's
- (1993) IEEE Electron Device Letters , vol.14 , pp. 103
- DiCarlo¹ Lugli²

20
- 0029250134
- Spatio-temporal impact ionisation transients: A Lucky drift model study in GaAs
- (1994) Solid-State Electronics , vol.38 , pp. 287
- Wilson¹ Brand²

21
- 84911785982
- (1987) IEE Proc. J. , vol.134 , pp. 313
- Marsland¹ Woods²

22
- 0023287664
- (1987) Semiconductor Sci. Technol. , vol.2 , pp. 116
- Ridley¹

23
- 0022152203
- The determination of impact ionization coefficients in
- (1985) IEEE Transactions on Electron Devices , vol.32 ED , pp. 2454
- Bulman¹ Robbins² Stillman³

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