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Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1529-1542

"Universal" dependence of avalanche breakdown on bandstructure: Choosing materials for high-power devices

Author keywords

Avalanche breakdown; Impact ionisation; Penn gap; Special points; Universal formula

Indexed keywords


EID: 0001444895     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1529     Document Type: Article
Times cited : (35)

References (52)
  • 2
    • 9444287420 scopus 로고
    • ed. W. T. Tsang, Academic, New York
    • F. Capasso: Semiconductors and Semimetals, ed. W. T. Tsang (Academic, New York, 1986) Vol. 22D, pp. 1-172.
    • (1986) Semiconductors and Semimetals , vol.22 D , pp. 1-172
    • Capasso, F.1
  • 25
  • 42
    • 0001202975 scopus 로고
    • L. V. Keldysh: Zh. Eksp. Teor. Fiz. 37 (1959) 713 [Sov. Phys.-JETP 10 (1960) 509].
    • (1960) Sov. Phys.-JETP , vol.10 , pp. 509


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.