Effect of Dead Space on the Excess Noise Factor and Time Response of Avalanche Photodiodes

IEEE Transactions on Electron Devices

Volumn 37, Issue 9, 1990, Pages 1976-1984

  Saleh, Bahaa E A ^a   Hayat, Majeed M ^a   Teich, Malvin C ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Center for Telecommunications Research Department of Electrical Engineering Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION; MATHEMATICAL STATISTICS; SEMICONDUCTOR DIODES, AVALANCHE;

DEAD SPACE EFFECTS; IMPACT IONIZATION; SIGNAL-TO-NOISE RATIOS;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0025482297     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.57159     Document Type: Article

References (27)

1. R. J. McIntyre, “Multiplication noise in uniform avalanche diodes,” IEEE Trans. Electron Devices, vol. ED-13, pp. 164–168, 1966.
2. ——, “The distribution of gains in uniformly multiplying avalanche photodiodes: Theory,” IEEE Trans. Electron Devices, vol. ED-19, pp. 703–713, 1972.
3. J. Conradi, “The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental,” IEEE Trans. Electron Devices, vol. ED-19, pp. 713–718, 1972.
4. P. P. Webb, R. J. Mclntyre, and J. Conradi, “Properties of avalanche photodiodes,” RCA Rev., vol. 35, pp. 234–278, 1974.
5. S. D. Personick, “New results on avalanche multiplication statistics with applications to optical detection,” Bell Svst. Tech. J., vol. 50, pp. 167–189, 1971.
6. ——, “Statistics of a general class of avalanche detectors with application to optical communication,” Bell Syst. Tech J., vol. 50, pp. 3075–3095, 1971.
7. M. C. Teich, K. Matsuo, and B. E. A. Saleh, “Time and frequency response of the conventional avalanche photodiode,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1511–1517, 1986.
8. K. Matsuo, M. C. Teich, and B. E. A. Saleh, “Noise properties and time response of the staircase avalanche photodiode,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2615–2623, 1985.
9. M. C. Teich, K. Matsuo, and B. E. A. Saleh, “Excess noise factors for conventional and superlattice avalanche photodiodes and photo-multiplier tubes,” IEEE J. Quantum Electron., vol. QE-22, pp. 1184–1193, 1986.
10. K. F. Brennan, Y. Wang, M. C. Teich, B. E. A. Saleh, and T. Khorsandi, “Theory of the temporal response of a simple multiquantumwell avalanche photodiode,” IEEE Trans. Electron Devices, vol. 35, pp. 1456–1467, 1988.
11. N. Z. Hakim, B. E. A. Saleh, and M. C. Teich, “Generalized excess noise factor for avalanche photodiodes of arbitrary structures,” IEEE Trans. Electron Devices, vol. 37, pp. 599–610, Mar. 1990.
12. Y. Okuto and C. R. Crowell, “Ionization coefficients in semiconductors: A nonlocalized property,” Phys. Rev., B., vol. 10, pp. 4284–4296, 1973.
13. ——, “Threshold energy effect on avalanche breakdown voltage in semiconductor junctions,” Solid State Electron., vol. 18, pp. 161–168, 1975.
14. R. A. LaViolette, “Oscillatory transients in a non-Markovian random walk,” J. Chem. Phys., vol. 89, pp. 6905–6911, 1988.
15. R. A. LaViolette and M. G. Stapelbroek, “A non-Markovian model of avalanche gain statistics for a solid-state photomultiplier,” J. Appl. Phys., vol. 65, pp. 830–836, 1989.
16. K. B. Athreya and P. E. Ney, Branching Processes. Berlin, FRG: Springer, 1972.
17. T. E. Harris, The Theory of Branching Processes. Berlin, FRG: Springer, 1963.
18. S. Karlin and H. Taylor, A First Course in Stochastic Processes. New York, NY: Academic Press, 1975.
19. R. Chin, N. Holonyak, G. E. Stillman, J. Y. Tang, and K. Hess, “Impact ionization in multilayered heterojunction structures,” Electron. Lett., vol. 16, pp. 467–469, 1980.
20. G. F. Williams, F. Capasso, and W. T. Tsang, “The graded bandgap multilayer avalanche photodiode: A new low-noise detector,” IEEE Electron Device Lett., vol. EDL-3, pp. 71–73, 1982.
21. F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams, “Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio,” Appl. Phys. Lett., vol. 40, pp. 38–40, 1982.
22. H. Blauvelt, S. Margalit, and A. Yariv, “Single-carrier-type dominated impact ionization in multilayer structures,” Elect. Lett., vol. 18. pp. 375–376, 1982.
23. F-Y Juang, U. Das, Y. Nashimoto, and P. K. Bhattacharya, “Electron and hole impact ionization coefficients in GaAs-AlxGa1 − xAs superlattices,” Appl. Phys. Lett., vol. 47, pp. 972–974, 1985.
24. F. Capasso, “Physics of avalanche photodiodes,” in Semiconductors and Semimetals, R. K. Willardson and A. C. Beer, Series Eds., vol. 22, pt. D, Lightwave Communications Technology, W. T. Tsang, Ed. New York, NY: Academic Press, 1985, pp. 1–172.
25. M. Zirngibl, J. C. Bischoff, D. Theron, and M. Ilegems, “A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3µm applications,” IEEE Electron Device Lett., vol. 10, pp. 336–338, 1989.
26. S. D. Personick, Fiber Optics. New York, NY: Plenum, 1985.
27. S. Miura, T. Mikawa, H. Kuwatsuka, N. Yasuoka, T. Tanahashi, and O. Wada, “AlGaSb avalanche photodiode exhibiting a very low excess noise factor,” Appl. Phys. Lett., vol. 54, pp. 2422–2423, 1989.