Avalanche multiplication in GalnP/GaAs single heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1207-1212

  Flitcroft, Richard M ^a   David, John P R ^a   Houston, Peter A ^a   Button, Christopher C ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche breakdown; Gallium compounds; Heterojunction bipolar transistors; Impact ionization; Semiconductor device breakdown; Semiconductor materials; Semiconductor materials measurements; Transistors

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; IONIZATION OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

BASE COLLECTOR BIAS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032095522     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678515     Document Type: Article

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