Spatial limitations to the application of the lucky-drift theory of impact ionization

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 659-663

  Plimmer, S A ^a   David, J P R ^a   Dunn, G M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; PHONONS; RELAXATION PROCESSES; SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

CARRIER TRANSPORT; IMPACT IONIZATION; LUCKY DRIFT THEORY; MULTIPLICATION CHARACTERISTICS;

IONIZATION;

EID: 0031120230     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563372     Document Type: Article

References (17)

1. G. A. Baraff, "Distribution functions and ionization rates for hot electrons in semiconductors," Phys. Rev., vol. 128, pp. 2507-2517, 1962.
2. B. K. Ridley, "The lucky-drift mechanism of impact ionization," J. Phys., vol. 16, pp. 3373-3388, 1983.
3. J. S. Marsland, "A lucky-drift model including a soft threshold energy, fitted to experimental measurements of ionization coefficients," Solid State Electron., vol. 30, pp. 125-132, 1987.
4. S. A. Plimmer, J. P. R. David, D. C. Herbert, T-W. Lee, G. J. Rees, P. A. Houston, R. Grey, P. N. Robson, A. W. Higgs, and D. R. Wight, "Investigation of impact ionization in thin GaAs diodes," IEEE Trans. Electron Devices, vol. 43, pp. 1066-1072, July 1996.
5. J. Marsland, C. Woods, and C. Brownhill, "Lucky-drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect," IEEE Trans. Electron Devices, vol. 38, pp. 1129-1135, 1992.
6. S. Wilson and S. Brand, "Spatio-temporal impact ionization transients: A lucky-drift model in GaAs," Solid State Electron., vol. 38, pp. 296-387, 1995.
7. M. Burt, "An alternative expression for the impact ionization coefficient in a semiconductor derived using lucky-drift theory," J. Phys. C, vol. 28, pp. 2477-2481, 1985.
8. C. L. Anderson and C. R. Crowell, "Threshold energies for electron-hole pair production by impact ionization in semiconductors," Phys. Rev. B., vol. 5, pp. 2267-2272, 1972.
9. G. E. Bulman, V. M. Robins, and G. E. Stillman, "The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements," IEEE Trans. Electron Devices, vol. ED-32, pp. 2454-2466, 1985.
10. M. V. Fichetti, "Monte-Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blends structures - Part I: Homogeneous transport," IEEE Trans. Electron Devices, vol. 38, pp. 634-649, 1991.
11. 0.7As/GaAs multilayers," Appl. Phys. Lett., vol. 66, pp. 2876-2878, 1995.
12. D. C. Herbert, "Breakdown voltage in ultra-thin pin diodes," Semicond. Sci. Technol., vol. 8, pp. 1993-1998, 1993.
13. S. McKenzie and M. G. Burt, "A test of the lucky-drift theory of the impact ionization coefficient using LD theory," J. Phys. C, vol. 18, pp. 1959-1973, 1986.
14. G. E. Stillman and C. M. Wolfe, "Avalanche photodiodes," in Semiconductors and Semimetals, R. K. Willardson and A. C. Beer, Eds. New York: Academic, vol. 12, pp. 291-393, 1977.
15. E. Bringuiller, "High field transport statistics and impact excitation in semiconductors," Phys. Rev. B, vol. 49, pp. 7974-7989.
16. M. G. Burt and S. McKenzie, "A test by Monte-Carlo simulation of the LD theory of impact ionization for a model with energy dependent parameters," Semicond. Sci. Technol., vol. 2, pp. 275-280, 1987.
17. G. M. Dunn, G. J. Rees, J. P. R. David, S. A. Plimmer, and D. C. Herbert, "Monte-Carlo simulation of impact ionization and current multiplication in short GaAs pin diodes," submitted to Semicond. Sci. Technol., 1996.