Effect of Dead Space on Gain and Noise of Double-Carrier-Multiplication Avalanche Photodiodes

IEEE Transactions on Electron Devices

Volumn 39, Issue 3, 1992, Pages 546-552

  Teich, Malvin C ^b   Saleh, Bahaa E A ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL COMMUNICATION EQUIPMENT; PROBABILITY; SEMICONDUCTOR DIODES, AVALANCHE; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS; SIGNAL RECEIVERS;

AVALANCHE PHOTODIODES; DOUBLE-CARRIER MULTIPLICATION; PROBABILITY DISTRIBUTION FUNCTIONS;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0026839191     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.123476     Document Type: Article

References (18)

1. R. J. McIntyre, “Multiplication noise in uniform avalanche diodes,” IEEE Trans. Electron Devices, vol. ED-13, pp. 164–168, 1966.
2. —, “ The distribution of gains in uniformly multiplying photodiodes: Theory,” IEEE Trans. Electron Devices, vol. ED-19, pp. 703–713, 1972.
3. J. Conradi, “The distribution of gains in uniformly multiplying photodiodes: Experimental,” IEEE Trans. Electron Devices, vol. ED-19, pp. 713–718, 1972.
4. P. P. Webb, R. J. McIntyre, and J. Conradi, “Properties of avalanche photodiodes,” RCA Rev., vol. 35, pp. 234–278, 1974.
5. P. P. Webb and R. J. McIntyre, “Recent developments in silicon avalanche photodiodes,” RCA Eng., vol. 27, pp. 96–102, 1982.
6. S. D. Personick, “New results on avalanche multiplication statistics with application to optical detection,” Bell Syst. Tech. J., vol. 50, pp. 167–189, 1971.
7. —, “ Statistics of a general class of avalanche detectors with application to optical communication,” Bell Syst. Tech. J., vol. 50, pp. 3075–3095, 1971.
8. M. C. Teich, K. Matsuo, and B. E. A. Saleh, “Excess noise factors for conventional and superlattice avalanche photodiodes and photomultiplier tubes,” IEEE J. Quantum Electron., vol. QE-22, pp. 1184–1193, 1986.
9. 19] M. C. Teich, K. Matsuo, and B. E. A. Saleh, “Time and frequency response of the conventional avalanche photodiode,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1511–1517, 1986.
10. Y. Okuto and C. R. Crowell, “Ionization coefficients in semiconductors: A nonlocalized property,” Phys. Rev. B, vol. 10, pp. 4284–4296, 1973.
11. —, “ Threshold energy effect on avalanche breakdown voltage in semiconductor junctions,” Solid-State Electron., vol. 18, pp. 161–168, 1974.
12. R. A. La Violette, “ Oscillatory transients is a non-Markovian random walk,” J. Chem. Phys., vol. 89, pp. 6905–6911, 1988.
13. R. A. La Violette and M. G. Stapelbroek, “ A non-Markovian model of avalanche gain statistics for solid-state photomultiplier,” J. Appl. Phys., vol. 65, pp. 830–836, 1989.
14. B. E. A. Saleh, M. M. Hayat, and M. C. Teich, “Effect of dead space on the excess noise factor and time response of avalanche photodiodes,” IEEE Trans. Electron Devices, vol. 37, pp. 1976–1984, 1990.
15. J. S. Marsland, “On the effect of dead space on avalanche multiplication and noise for uniform electric fields,” J. Appl. Phys., vol. 67, pp. 1929–1933, 1990.
16. K. B. Athreya and P. E. Ney, Branching Processes. Berlin, FRG: Springer, 1972.
17. S. D. Personick, Fiber Optics. New York: Plenum, 1985.
18. S. Miura, T. Mikawa, H. Kuwatsuka, N. Yasuoka, T. Tanahashi, and O. Wada, “AlGaSb avalanche photodiode exhibiting a very low excess noise factor,” Appl. Phys. Lett., vol. 54, pp. 2422–2423, 1989.