Effect of Dead Space on Gain and Noise in Si and GaAs Avalanche Photodiodes

IEEE Journal of Quantum Electronics

Volumn 28, Issue 5, 1992, Pages 1360-1365

  Hayat, Majeed M ^a   Sargeant, Winslow L ^a   Saleh, Bahaa E A ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES, AVALANCHE;

IMPACT IONIZATION;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0026868198     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.135278     Document Type: Article

References (8)

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8. Y. Okuto and C. R. Crowell, “Energy-conservation considerations in the characterization of impact ionization in semiconductors,” Phys. Rev. B, vol. 6, pp. 3076-3081, 1972.