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Volumn 76, Issue 25, 1996, Pages 4725-4728

Charge injection and stm-induced vacancy migration on GaAs(110)

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EID: 0000863426     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.4725     Document Type: Article
Times cited : (27)

References (32)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.