POST-IRRADIATION EFFECTS IN FIELD-OXIDE ISOLATION STRUCTURES.

IEEE Transactions on Nuclear Science

Volumn NS-34, Issue 6, 1987, Pages

  Oldham, T R ^a   Lelis, A J ^a   Boesch, H E ^a   Benedetto, J M ^a   McLean, F B ^a   McGarrity, J M ^a  

^a US Army Combat Capabilities Development Command Army Research Laboratory

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - OXIDATION;

LEAKAGE CURRENTS; POST-IRRADIATION EFFECTS; TIME DEPENDENCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023593395     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)