A Highly Manufacturable Trench Isolation Process for Deep Submicron DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 57-60

  Fazan, Pierre C ^a   Mathews, Viju K ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

B-FIELDS; DEEP SUB-MICRON; DEEP SUBMICRONS; DEEP-SUB MICRONS; ISOLATION PROCESS; RE-OXIDATION; SHALLOW-TRENCH-ISOLATION PROCESS; SIMPLE++; TRENCH ISOLATION; TRENCH SIDEWALLS;

CELLULAR ARRAYS; ETCHING; FIELD EFFECT TRANSISTORS; OXIDATION;

OXIDE SPACERS; PLANARIZATION; SHALLOW TRENCH ISOLATION (STI); VERTICAL FIELD IMPLANT;

RANDOM ACCESS STORAGE;

EID: 0027867595     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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