Strategies for lot acceptance testing using CMOS transistors and ICs

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1971-1980

  Schwank, J R ^a   Sexton, F W ^a   Fleetwood, D M ^a   Rodgers, M S ^a   Shaneyfelt, M R ^a,b   Hughes, K L ^a,c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Allied Signal Microelectronics Operation ^*  (United States)

^c L M Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; INTEGRATED CIRCUITS--SPACE APPLICATIONS; SEMICONDUCTOR DEVICES, MOS; X-RAYS;

CMOS TECHNOLOGY; THRESHOLD VOLTAGE;

TRANSISTORS, FIELD EFFECT;

EID: 0024923683     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45394     Document Type: Article

References (29)

1. P. S. Winokur, F. W. Sexton, J. R. Schwank, D. M. Fleetwood, P. V. Dressendorfer, T. F. Wrobel, and D. C. Turpin, “Total-Dose Radiation and Annealing Studies,” IEEE Trans. Nuc. Sci., NS-33, 1343 (1986).
2. P. Buchman, “Total Dose Hardness for Microcircuits for Space Environment,” IEEE Trans. Nuc. Sci., NS-33, 1352 (1986).
3. P. S. Winokur, F. W. Sexton, G. L. Hash, and D. C. Turpin, “Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments,” IEEE Trans. Nuc. Sci., NS-34, 1448 (1987).
4. D. B. Brown and A. H. Johnston, “A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microcircuits,” IEEE Trans. Nuc. Sci., NS-34, 1720 (1987).
5. D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, “Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments,” IEEE Trans. Nuc. Sci., NS-35, 1497 (1988).
6. A. H. Johnston, “Super Recovery of Total Dose Damage in MOS Devices,” IEEE Trans. Nuc. Sci., NS-31, 1427 (1984).
7. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nuc. Sci., NS-31, 1434 (1984).
8. J. L. Azarewicz, “Dose Rate Effects on Total Dose Damage,” IEEE Trans. Nuc. Sci., NS-33, 1420 (1986).
9. A. H. Johnston and S. B. Roeske, “Total Dose Effects at Low Dose Rates,” IEEE Trans. Nuc. Sci., NS-33, 1487 (1986).
10. D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors,” IEEE Trans. Nuc. Sci., NS-34, 1178 (1987).
11. J. S. Browning, M. P. Connors, C. L. Freshman, and G. A. Finney, “Total Dose Characterization of a CMOS Technology at High Dose Rates and Temperatures,” IEEE Trans. Nuc. Sci., NS-35, 1557 (1988).
12. T. V. Nordstrom, F. W. Sexton, and R. W. Light, “A Three Micron CMOS Technology for Custom High Reliability and Radiation Hardened Integrated Circuits,” Proc. 5th IEEE Custom Integrated Circuits Conf., Rochester, NY, May 1983, pp. 43–47.
13. J. R. Schwank, P. S. Winokur, F. W. Sexton, and E. B. Errett, “A 10-Megarad Hardened VLSI Process,” J. Radiation Effects: Research and Engineering, 4, 10 (1985).
14. M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, and F. W. Sexton, “MOS Process Development for Ultrahardened Applications” (to be published).
15. P. V. Dressendorfer, B. D. Shafer, R. W. Light, and W. R. Dawes, Jr., “A Radiation Hardened VLSI CMOS Technology Demonstrated With a 16K Static RAM,” J. Radiation Effects: Research and Engineering, 2, 347 (1983).
16. F. W. Sexton and J. R. Schwank, “Correlation of Radiation Effects in Transistors and Integrated Circuits,” IEEE Trans. Nuc. Sci., NS-32, 3975 (1985).
17. F. W. Sexton, J. R. Schwank, K. L. Hughes, M. S. Rodgers, R. S. Flores, and R. A. Kohler, “Temperature Dependence of Advanced CMOS Integrated-Circuit Response in High Dose-Rate, High Total-Dose Ionizing Radiation Environments”, J. Radiation Effects: Research and Engineering (submitted for publication).
18. T. R. Oldham and J. M. McGarrity, “Comparison of 60 Co Response and 10 keV X-ray Response in MOS Capacitors,” IEEE Trans. Nuc. Sci., NS-30, 4377 (1983).
19. J. G. Kelly, T. F. Luera, L. D. Posey, D. W. Vehar, D. B. Brown, and C. M. Dozier, “Dose Enhancement Effects in MOSFET ICs Exposed in Typical 60 Co Facilities,” IEEE Trans. Nuc. Sci., NS-30, 4388 (1983).
20. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nuc. Sci., NS-31, 1453 (1984).
21. P. J. McWhorter and P. S. Winokur, “Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor Transistors,” Appl. Phys. Lett., 48, 133 (1986).
22. H. J. Tausch, R. Wemhoner, R. L. Pease, J. R. Schwank, and R. J. Maier, “A Programmable Test System for Transient Annealing Characterization of Irradiated MOSFETs,” IEEE Trans. Nuc. Sci., NS-34, 1763 (1987).
23. S. Winegarden and D. Pannel, “Paragons for Memory Test,” Proc. of the IEEE Test Conf., 1981, pp. 44–48.
24. P. S. Winokur, E. B. Errett, D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process,” IEEE Trans. Nuc. Sci., NS-32, 3954 (1985).
25. H. E. Boesch, Jr., “Time-Dependent Interface Trap Effects in MOS Devices,” IEEE Trans. Nuc. Sci., NS-35, 1160 (1988).
26. N. S. Saks, C. M. Dozier, and D. B. Brown, “Time Dependence of Interface Trap Formation in MOSFETs Following Pulsed Irradiation,” IEEE Trans. Nuc. Sci., NS-35, 1168 (1988).
27. D. M. Fleetwood, J. R. Schwank, F. W. Sexton, P. S. Winokur, and M. R. Shaneyfelt, Accepted for publication in the 1989 J. Radiation Effects: Research and Engineering.
28. D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. L. Pease, “An Improved Standard Total Dose Test for CMOS Space Electronics,” this proceedings.
29. D. M. Fleetwood and P. V. Dressendorfer, “A Simple Method to Identify Radiation and Annealing Biases That Lead to Worst-Case Static RAM Postirradiation Response,” IEEE Trans. Nuc. Sci., NS-34, 1408 (1987).