Trench isolation for 0.45 μm active pitch and below

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 679-682

  Perera, Asanga H ^a   Lin, Jung Hui ^a   Ku, Yao Ching ^a   Azrak, Marijean ^a   Taylor, Bill ^a   Hayden, Jim ^a   Thompson, Matt ^a   Blackwell, Mike ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ETCHING; GATES (TRANSISTOR); MOSFET DEVICES; OXIDATION; OXIDES; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

ACTIVE EDGE ROUNDING; ACTIVE PITCH; LATCH UP HOLDING VOLTAGE; SUB THRESHOLD CONDUCTION; TRENCH ISOLATION TECHNOLOGY;

MOS DEVICES;

EID: 0029491764     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)