Self-aligned phosphorus doped polysilicon gate MOS device radiation hardening

IEEE Transactions on Nuclear Science

Volumn 29, Issue 6, 1982, Pages 1702-1706

  Chang, C P ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - RADIATION EFFECTS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020249673     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1982.4336432     Document Type: Article

References (7)

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3. C.P. Chang, IEEE Trans. Nucl. Sci., NS-23,1639 (1976).
4. K.G. Aubuchon, H.T. Peterson and D.P. Schumake, NS-23, 1613 (1976).
5. H.L. Hughes, IEEE Trans. Nucl. Sci., NS-26, 5053 (1979).
6. T.V. Nordstrom and C.F. Gibbon, IEEE Trans. Nucl. Sci., NS-28, 4349 (1981).
7. K.M. Schlesier and C.W. Benyon, IEEE Trans. Nucl. Sci., NS-23, 1599 (1976).