Measurement of a cross-section for single-event gate rupture in power MOSFET's

IEEE Electron Device Letters

Volumn 17, Issue 4, 1996, Pages 163-165

  Mouret, I ^a,b,c   Calvel, P ^a,d   Allenspach, M ^a,b   Titus, J L ^a,e   Wheatley, C F ^a,f   LaBel, K A ^a,g   Calvet, M C ^a,h   Schrimpf, R D ^a,b   Galloway, K F ^a,b  

^a IEEE

^b UNIVERSITY OF ARIZONA   (United States)

^c Aérospatiale   (France)

^d THALES ALENIA SPACE   (France)

^e NAVAL SURFACE WARFARE CENTER   (United States)

^f RR2 ^*  (United States)

^g NASA GODDARD SPACE FLIGHT CENTER   (United States)

^h AEROSPATIALE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POWER SUPPLIES TO APPARATUS; EQUIPMENT TESTING; GATES (TRANSISTOR); IONS; OXIDES; POWER ELECTRONICS;

DRAIN BIAS; GATE OXIDES; HEAVY ION EFFECTS; POWER MOSFET DEVICES; SINGLE EVENT GATE RUPTURE; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030129775     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485161     Document Type: Article

References (12)

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