VLSI integration of SiGe epitaxial base bipolar transistors

Conference Proceedings of the International Symposium on Signals, Systems and Electronics

Volumn , Issue , 1998, Pages 50-55

  Mouis, M ^a   Chantre, A ^a  

^a France Telecom   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BICMOS TECHNOLOGY; INTEGRATION CONSTRAINTS;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ION IMPLANTATION; PERFORMANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; VLSI CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032217984     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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