SiGe base bipolar technology with 74 GHz fmax and 11 ps gate delay

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 739-742

  Meister, T F ^a   Schaefer, H ^a   Franosch, M ^a   Molzer, W ^a   Aufinger, K ^a   Scheler, U ^a   Walz, C ^a   Stolz, M ^a   Boguth, S ^a   Boeck, J ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; EPITAXIAL GROWTH; NITRIDES; PHOSPHORIC ACID; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

COMPOSITE SPACER TECHNIQUE; MAXIMUM CUT OFF FREQUENCY; MAXIMUM OSCILLATION FREQUENCY; SELECTIVE EPITAXIAL GROWTH; WET ETCHING;

BIPOLAR TRANSISTORS;

EID: 18144436643     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)